CXMT to Start HBM3E Mass Production by the End of 2026
According to an exclusive Reuters report, CXMT is expected to start mass production of its first-ever HBM memory in the HBM3E form factor within the next two months, meaning it will officially start by the end of the year. CXMT began risk production of HBM3E memory in August, but the company has struggled with the yield of HBM3E memory modules, and this situation remains similar today, according to the latest report. The yield challenge stems from the immaturity of the through-silicon via (TSV) technology it employs: front-end manufacturing achieves around 30% yields, while back-end processing adds about 70% on top of the original 30%. Data suggests CXMT is attempting to achieve HBM3E with only 3,000 TSVs per layer and trying to pack 8 layers into the regular 8-high HBM3E configuration (compared with Samsung's roughly 5,000 TSVs per layer on HBM2 and SK hynix's more than 8,000 TSVs per layer on HBM3). Given these challenges, the company is unlikely to transition to a higher-capacity 12-high HBM in the near term as it addresses engineering issues. JEDEC's official data for HBM3E indicates a 1,024-bit width and speeds from 9.2 Gbps per pin to 12.4 Gbps, with most standard configurations targeting 9.6 Gbps per pin, total bandwidth around 1.2 TB/s, and capacities from 24 GB using 8-high stacks to 36 GB using 12-high stacks of 24 Gb layers. The mass production start is an expectation, not a confirmed completed event.
- Related manufacturers
- CXMT
- Impact score
- 60 / 100, medium impact