NuAxi Stream - Real-Time Semiconductor Intelligence

Sat, Dec 9

00:19Impact score 65
Toshiba and ROHM collaborate on silicon and SiC power device and wafer manufacturing
ROHM and Toshiba Electronic Devices & Storage plan to collaborate on manufacturing and increased volume production of SiC and Si power devices, supported by METI. They will make intensive investments to enhance supply capabilities. Bearish: Capacity expansion plans typically alleviate shortages and may suppress spot prices.
SiC power devicesSilicon power devicesROHM Co Ltd, Toshiba Electronic Devices & Storage Corp (TDSC)Semiconductor TodayCapacity Change

Mon, Jun 12

16:37Impact score 60
Aehr receives $13.7m follow-on orders from its lead silicon carbide test & burn-in customer
Aehr Test Systems received $13.7 million in follow-on orders for its WaferPak full-wafer Contactors from its lead SiC customer. The orders are to support the customer's increased production capacity for SiC power semiconductors targeting the electric vehicle market. Bullish: This signals sustained, high-volume demand for SiC devices, reinforcing the tight supply outlook for SiC wafers and related production equipment.
Silicon Carbide (SiC) Power SemiconductorsAehr Test SystemsSemiconductor TodayCapacity Change

Wed, Jun 7

22:45Impact score 58
ST and Sanan creating 200mm SiC device fab JV in China
STMicroelectronics and Sanan Optoelectronics have agreed to create a new 200mm silicon carbide device manufacturing joint venture in Chongqing, China. This move aims to secure a localized supply of SiC devices for the Chinese market, leveraging Sanan's existing SiC substrate production. Bearish: This JV represents a significant capacity addition, potentially easing long-term supply constraints and putting downward pressure on SiC device pricing.
SiC MOSFETSiC Power DeviceSTMicroelectronics, Sanan Optoelectronics Co LtdSemiconductor TodayCapacity Change

Wed, May 31

16:28Impact score 55
Navitas invests $20m in its first three Aixtron G10-SiC epi reactors
Navitas Semiconductor has invested $20 million to acquire its first three Aixtron G10-SiC epitaxial reactors, marking a strategic move to vertically integrate and increase control over its GeneSiC silicon carbide power semiconductor production. This investment aims to reduce costs and enhance revenue capacity by bringing a key manufacturing step in-house. Bearish: This capacity expansion for SiC power devices adds to the industry's growing supply, potentially easing long-term pricing pressure and availability constraints.
SiC MOSFETSiC Power SemiconductorsNavitas SemiconductorSemiconductor TodayCapacity Change

Fri, May 26

23:46Impact score 55
Coherent and Mitsubishi Electric collaborating to scale manufacturing of silicon carbide power electronics
Coherent Corp and Mitsubishi Electric have signed an MOU to collaborate on scaling manufacturing of silicon carbide power electronics on a 200mm platform. This partnership aims to increase production capacity for SiC devices, a key component in electric vehicles and industrial applications. Bearish: The planned capacity expansion could alleviate long-term supply constraints, potentially easing price pressures for SiC power electronics.
Silicon Carbide (SiC) Power ElectronicsCoherent Corp, Mitsubishi Electric CorpSemiconductor TodayCapacity Change

Thu, May 4

20:08Impact score 65
Wolfspeed’s revenue growth constrained by 200mm SiC material capacity ramp
Wolfspeed reported Q3 FY23 revenue of $228.7M, up 22% YoY, but highlighted that its revenue growth is being constrained by the ramp of its 200mm SiC material capacity. The company is in a critical expansion phase for its Mohawk Valley fab, indicating current supply cannot meet demand. Bullish: The ongoing capacity constraint for a key bottleneck material suggests sustained supply tightness and potential for price support in the SiC market.
SiC SubstratesSiC Power DevicesWolfspeed IncSemiconductor TodayCapacity Change

Mon, May 1

17:15Impact score 58
Hamamatsu Photonics constructing new building at Miyakoda factory to boost laser production
Hamamatsu Photonics is investing approximately 4 billion yen to construct a new building at its Miyakoda factory, specifically aimed at increasing production capacity for laser devices. This expansion is driven by growing demand in fields such as semiconductor manufacturing and biotechnology. Bearish: The increased supply capacity for key laser components could alleviate potential supply constraints and exert downward pressure on future prices.
Laser DiodesOptical SensorsPhotodiodesHamamatsu Photonics K.K.Semiconductor TodayCapacity Change

Wed, Mar 15

17:18Impact score 60
Aehr receives $6.7m order for FOX WaferPak full-wafer contactors
Aehr Test Systems received a $6.7 million order for its FOX WaferPak full-wafer contactors from a lead SiC customer to support increased production capacity for EV power semiconductors. The order indicates strong, sustained demand from a major automotive supplier scaling SiC output. Bullish: This signals robust underlying demand for SiC devices, supporting pricing and volume expectations for the supply chain.
Silicon Carbide Power SemiconductorsAehr Test SystemsSemiconductor TodayCapacity Change

Tue, Feb 14

00:46Impact score 58
Wolfspeed expands senior leadership team to support growth
Wolfspeed has promoted four global operations leaders to its senior leadership team to support its accelerated growth and capacity expansion plan. This move signals the company's commitment to scaling production of its silicon carbide and gallium nitride semiconductors. Bearish: The planned capacity expansion for SiC/GaN devices could increase market supply over the medium term, potentially easing pricing pressure.
SiC WafersSiC Power DevicesGaN RF DevicesWolfspeedSemiconductor TodayCapacity Change

Thu, Feb 2

20:04Impact score 60
ZF invests in Wolfspeed to support construction of largest SiC device fab
ZF Friedrichshafen AG has made a significant investment in Wolfspeed to support the construction of the world's largest 200mm silicon carbide device fab in Ensdorf, Germany. This partnership aims to secure SiC supply for the automotive and industrial sectors amid growing demand for electrification.
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This major capacity expansion could ease long-term supply constraints for SiC power devices, but the multi-year construction timeline means near-term market tightness persists.
Silicon Carbide (SiC) MOSFETsSiC Power DevicesWolfspeed IncSemiconductor TodayCapacity Change

Fri, Jan 27

02:37Impact score 58
Wolfspeed and ZF to build SiC device fab in Germany, says Handelsblatt
Wolfspeed and ZF plan to build a multi-billion-euro SiC power device fab and research center in Germany, targeting the EV market. This represents a significant capacity expansion in the SiC supply chain, backed by a major automotive supplier. Bearish: This long-term capacity addition, while not immediate, signals increased future supply for SiC power semiconductors, potentially easing future pricing pressure.
SiC Power DevicesWolfspeed Inc, ZF Friedrichshafen AGSemiconductor TodayCapacity Change

Tue, Dec 6

20:52Impact score 58
EPC to use VIS’ 8-inch GaN foundry from early 2023
EPC has entered a multi-year agreement to utilize VIS's 8-inch wafer fab for GaN-on-Si power devices, significantly increasing its manufacturing capacity starting early 2023. This move expands the available foundry capacity for GaN power semiconductors, a high-growth segment. Bearish: The increased supply from a new, larger-wafer source could alleviate potential supply constraints and exert downward pressure on GaN power component pricing in the medium term.
GaN-on-Si Power TransistorsGaN-on-Si ICsEfficient Power Conversion Corp (EPC), Vanguard International Semiconductor Corp (VIS)Semiconductor TodayCapacity Change

Wed, Oct 5

21:40Impact score 60
ST to build €730m silicon carbide wafer factory in Catania, Italy
STMicroelectronics announced a €730 million investment to build an integrated silicon carbide (SiC) wafer manufacturing facility in Catania, Italy, with production starting in 2023. This move aims to secure substrate supply for the growing demand from automotive and industrial electrification. Bearish: This significant capacity expansion for a key bottleneck material (SiC substrates) increases long-term supply, potentially easing price pressures and reducing supply chain risk premiums for SiC devices.
Silicon Carbide (SiC) WafersSiC MOSFETsSiC DiodesSTMicroelectronicsSemiconductor TodayCapacity Change

Fri, Sep 30

19:41Impact score 45
KLA to build new R&D and manufacturing facility for SPTS in Newport, Wales
KLA Corp plans to build a new R&D and manufacturing facility for its SPTS division in Newport, Wales. The expansion targets production capabilities for etch, PVD, and CVD solutions used in MEMS, advanced packaging, and power devices. Neutral: This long-term capacity addition supports future supply but has no immediate impact on current trading dynamics.
MEMSAdvanced PackagingLEDKLA CorpSemiconductor TodayCapacity Change

Fri, Aug 12

23:21Impact score 60
onsemi expands silicon carbide production facility in New Hampshire
onsemi has expanded its silicon carbide (SiC) production facility in Hudson, New Hampshire, increasing its capacity for SiC wafers and devices. This move is part of the company's strategy to meet growing demand for SiC solutions in electric vehicles and industrial applications. Bearish: The expansion increases future SiC supply, potentially easing long-term pricing pressure and alleviating supply constraints in the power semiconductor market.
Silicon Carbide (SiC) MOSFETsSilicon Carbide (SiC) WafersonsemiSemiconductor TodayCapacity Change

Wed, Jun 8

21:03Impact score 45
Riber receives order for two MBE 6000 production systems, plus option for four more
Riber received an order for two MBE 6000 production systems, with an option for four more, from an undisclosed industrial client for delivery this year. MBE systems are critical for producing advanced compound semiconductor materials used in RF, power, and photonics devices. Watch: This signals potential future capacity expansion for specialized III-V semiconductor wafers, but the ultimate supply impact depends on the client's identity and production ramp plans.
Compound Semiconductor WafersIII-V MaterialsRiberSemiconductor TodayCapacity Change

Tue, Apr 26

18:03Impact score 58
Wolfspeed opens Mohawk Valley 200mm silicon carbide fab
Wolfspeed has officially opened its new 200mm silicon carbide wafer fabrication plant in Mohawk Valley, New York. This facility represents a significant capacity expansion aimed at supporting the industry transition from silicon to SiC-based semiconductors. Bearish: The increased production capacity for SiC wafers and devices could alleviate long-term supply constraints, potentially putting downward pressure on future prices.
Silicon Carbide (SiC) WafersSiC Power SemiconductorsWolfspeed IncSemiconductor TodayCapacity Change

Mon, Mar 28

19:11Impact score 55
Showa Denko enters mass production of 6-inch SiC single-crystal substrates
Showa Denko has commenced mass production of 6-inch silicon carbide (SiC) single-crystal wafers. This expansion is driven by rapidly rising demand for power semiconductors in electric vehicles, rail, and industrial equipment. Bearish: The increase in substrate supply capacity could alleviate long-term supply constraints and exert downward pressure on SiC wafer pricing.
SiC SubstratesSiC Power SemiconductorsShowa Denko K.K.Semiconductor TodayCapacity Change

Analog	$0.68	−5.9%
Connector	$0.75	+0.2%
CPU	$386.74	−21.3%
DDR4	$88.40	−0.2%
DDR52026-W13	$14.89	−11.2%
GPU	$478.20	+8.2%
MCU	$0.68	−61.7%Unusual
MLCC	$0.01	+54.0%Unusual
MOSFET	$0.12	−82.8%Unusual
PMIC2026-W13	$0.44	−12.5%
SSD/HDD	$288.43	n/a

NuAxi Stream - Real-Time Semiconductor Intelligence

Sat, Dec 9

Toshiba and ROHM collaborate on silicon and SiC power device and wafer manufacturing

Mon, Jun 12

Aehr receives $13.7m follow-on orders from its lead silicon carbide test & burn-in customer

Wed, Jun 7

ST and Sanan creating 200mm SiC device fab JV in China

Wed, May 31

Navitas invests $20m in its first three Aixtron G10-SiC epi reactors

Fri, May 26

Coherent and Mitsubishi Electric collaborating to scale manufacturing of silicon carbide power electronics

Thu, May 4

Wolfspeed’s revenue growth constrained by 200mm SiC material capacity ramp

Mon, May 1

Hamamatsu Photonics constructing new building at Miyakoda factory to boost laser production

Wed, Mar 15

Aehr receives $6.7m order for FOX WaferPak full-wafer contactors

Tue, Feb 14

Wolfspeed expands senior leadership team to support growth

Thu, Feb 2

ZF invests in Wolfspeed to support construction of largest SiC device fab

Fri, Jan 27

Wolfspeed and ZF to build SiC device fab in Germany, says Handelsblatt

Tue, Dec 6

EPC to use VIS’ 8-inch GaN foundry from early 2023

Wed, Oct 5

ST to build €730m silicon carbide wafer factory in Catania, Italy

Fri, Sep 30

KLA to build new R&D and manufacturing facility for SPTS in Newport, Wales

Fri, Aug 12

onsemi expands silicon carbide production facility in New Hampshire

Wed, Jun 8

Riber receives order for two MBE 6000 production systems, plus option for four more

Tue, Apr 26

Wolfspeed opens Mohawk Valley 200mm silicon carbide fab

Mon, Mar 28

Showa Denko enters mass production of 6-inch SiC single-crystal substrates

Chip Teardown Lab2 opened

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