[News] World’s First Ampere-Level Vertical Gallium Oxide MOSFET Developed

What happened

According to a report dated 2026-10-27, Shanghai-based Jiachi Power Technology, located in Shanghai's fourth-generation semiconductor industry cluster, has completed the first phase of wafer fabrication and validation for its vertical gallium oxide MOSFET chips. Through device-structure innovations and in-house process development, the company describes the result as the world's first enhancement-mode vertical gallium oxide MOSFET with on-state current exceeding 1 A and breakdown voltage above 900 V. Measured results showed a threshold voltage of 3.9 V enabling stable enhancement-mode operation, an on-state current of 1.2 A, and a specific on-resistance of 33 mΩ·cm². Designed for a 750 V operating class, the device demonstrated a measured breakdown voltage exceeding 900 V with leakage current below 3 μA, which the source says approaches mature commercial silicon and silicon carbide power devices. Based on the company's review of publicly available research and industry results, this is the first reported vertical gallium oxide MOSFET with on-state current above 1 A. Stable and controllable p-type doping had long been a major challenge, and prior public literature had not documented vertical gallium oxide MOSFETs with on-state currents exceeding 1 A. The technical team said the results validate the feasibility of its original device architecture and in-house self-aligned ion implantation approach, marking an important step from laboratory validation toward commercial engineering. Going forward, the company plans to further optimize device structures, process parameters, and epitaxial material integration, and to advance chip development, sample delivery for customer evaluation, and production-ready process establishment.

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Source: TrendForce · 10/26/2026 · View original source