NuAxiSemiconductor trade intelligence
RT NEWS: A new breakthrough in fourth-generation semiconductors? China’s Jiachi Power Technology claims a world-first vertical gallium oxide MOSFET, ...
What happened
Per a TrendForce repost, China's Jiachi Power Technology claims a world-first ampere-level vertical gallium oxide MOSFET, delivering over 1 A of on-state current and a 900 V breakdown voltage, reportedly setting multiple performance records and described as a potential breakthrough in fourth-generation semiconductors. This is a company claim; the source provides no independent verification or volume-production information.
Impact and signal
Medium impactImpact score: 40/100
Affected components and suppliers
vertical gallium oxide MOSFET
Jiachi Power Technology
fourth-generation semiconductorsgallium oxideMOSFETperformance recordChina
Source and time
Source: TrendForce Official (Market Data) · 10/26/2026 · View original source
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