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Simulations Pinpoint Leakage Pathway In GAAFETs (Sandia, Luxembourg)

What happened

Researchers at Sandia National Laboratories and Luxembourg Institute of Science and Technology published a technical paper titled “Revealing New Leakage Paths in GAAFETs using Predictive First-Principles Simulations.” The abstract notes that GAAFETs are emerging as successors to FinFETs and are central to continued scaling at advanced semiconductor nodes, despite their improved…

Impact and signal

Low impactImpact score: 0/100

Source and time

Source: Semiconductor Engineering · 10/14/2026 · View original source

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