[News] CXMT Accelerates 4F² DRAM Push, Eyes Year-End Server DDR5 RDIMM Launch

What happened

According to Yicai Global, CXMT President Cao Kanyu introduced the company's 4F² DRAM architecture at the October 10 Integrated Circuits and Chiplet Conference, with plans to launch next-generation DDR5 RDIMMs based on the technology by year-end — a plan, not a confirmed high-volume production milestone. As explained by MyDrivers, the industry currently relies on 6F² designs, in which each memory cell occupies six times the square of the minimum feature size; 4F² reduces that footprint to four times, potentially boosting memory density by 30%–50% within the same area. Central to CXMT's approach is a Vertical Surrounded Gate (VSG) transistor, which improves electrostatic control while reducing leakage current and short-channel effects. Cao said CXMT has more than 300 published patent families related to the 4F² architecture. Per TrendForce, CXMT ranked fourth in global DRAM revenue in 2Q26, with its market share climbing to 9.5% from 7.6% in the previous quarter, trailing Samsung (39.4%), SK hynix (24.9%) and Micron (23.3%). Meanwhile, Samsung unveiled a 16Gb prototype combining 4F² cells and wafer-to-wafer hybrid bonding at ISSCC 2026, but is reportedly prioritizing hybrid bonding for commercialization; that technology is not expected to reach the market before 2028, with no firm timeline for 4F² integration. Wccftech reports Samsung is eyeing 4F² adoption for its B1b process, reportedly renamed D0a, while SK hynix is advancing vertical-gate (VG) 4F² DRAM. According to Money Today, CXMT's upcoming products may only partially adopt 4F² technology, and achieving high-volume production remains a separate hurdle.

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Source: TrendForce · 10/11/2026 · View original source