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Oxford Instruments and ITRI develop recessed-gate GaN MISHEMT

What happened

Oxford Instruments and ITRI announced a technology development for recessed-gate GaN MISHEMTs, targeting improved performance for EV and data center power applications. This is a research and development milestone focused on process technology. Neutral: This is a long-term R&D announcement with no immediate impact on component supply, pricing, or trading dynamics.

Impact and signal

Low impactImpact score: 12/100

Affected components and suppliers

GaN MISHEMTGaN-on-Si power devices
Oxford Instruments Plasma Technology
R&DGaNpower semiconductorstechnology milestone

Source and time

Source: Semiconductor Today · 9/26/2022 · View original source

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