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Cornell develops HEMTs on single-crystal AlN substrate for RF power amplifiers
What happened
Cornell University researchers have developed a new HEMT transistor architecture on single-crystal aluminum nitride (AlN) substrates, targeting high-power RF amplifiers. This academic R&D milestone aims to address supply chain vulnerabilities related to gallium. Neutral: This is a long-term, pre-commercial technology development with no immediate impact on component pricing or supply.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
RF Power Amplifier TransistorsGaN HEMTs
R&Dtechnology-trendsupply-chain-diversification
Source and time
Source: Semiconductor Today · 12/11/2025 · View original source
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