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CEA-Leti proof of concept demonstrates higher electrons mobility in germanium tin than in silicon or germanium
What happened
CEA-Leti's research demonstrates higher electron mobility in germanium tin compared to silicon or germanium, enabling potential for lower-power, higher-performance vertical transistors. This is a laboratory proof-of-concept for future chip architectures, with no immediate commercial production timeline. Neutral: This R&D milestone has no direct or near-term impact on semiconductor supply, demand, or pricing for traders.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
Germanium Tin WafersAdvanced Transistors
CEA-Leti
R&Dmaterial-scienceperformance-gain
Source and time
Source: Semiconductor Today · 6/5/2023 · View original source
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