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Indian Institute of Science develops fully indigenous GaN power switch
What happened
The Indian Institute of Science (IISc) has developed a fully indigenous 200V/8A normally-off GaN-on-Si HEMT, covering the process from epitaxy to packaging. This is a research milestone demonstrating local capability in a key power semiconductor technology. Neutral: This academic R&D breakthrough has no immediate impact on commercial supply, pricing, or procurement decisions for GaN components.
Impact and signal
Low impactImpact score: 7/100
Affected components and suppliers
GaN Power Switches
rd-milestoneganindigenous
Source and time
Source: Semiconductor Today · 9/28/2023 · View original source
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