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Raytheon to develop ultra-wide-bandgap semiconductors for DARPA
What happened
Raytheon has been awarded a three-year, two-phase contract from DARPA to develop foundational ultra-wide-bandgap semiconductors based on diamond and aluminium nitride technology. The research aims to improve power delivery and thermal management for defense-related sensors and electronics. Neutral: This is a long-term, early-stage R&D project with no immediate impact on commercial semiconductor supply, demand, or pricing.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
Ultra-Wide-Bandgap Semiconductors (UWBGS)Diamond SubstratesAluminium Nitride (AlN) Substrates
Raytheon (RTX)
R&DdefenseDARPA
Source and time
Source: Semiconductor Today · 10/2/2024 · View original source
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