Micron pulls the plug on future 4F² DRAM after two decades of research in dramatic shift
On 22 October 2026, Micron announced it will abandon future 4F² DRAM after roughly two decades of research. The company says the architecture offers no meaningful density advantages, increases manufacturing complexity and costs, and has fundamental scaling limitations; CTO Scott DeBoer said capacitor pitch, not nominal transistor area, determines DRAM bit density, and that 4F² has no sustainable scaling path beyond a certain point, with 3D DRAM ultimately coming in instead. Micron acknowledges 4F² is technically feasible and that it has manufactured experimental devices based on the architecture. A 4F² cell theoretically occupies about 33% less area than a 6F² cell and could theoretically increase memory cells per wafer by 50%, but Micron argues these theoretical advantages do not necessarily translate into higher density in practice. Micron plans to continue scaling conventional 6F² DRAM by reducing capacitor pitch and shrinking process nodes; its upcoming 1δ process technology is scheduled to enter volume production in the second half of 2027 with a mid-20% improvement in bit density compared with its predecessor, and Micron plans to adopt High-NA EUV lithography for future DRAM generations. The company is also developing multiple generations of 3D DRAM production nodes but has not disclosed when the new architecture will enter commercial production. According to TechInsights, both Samsung and SK hynix still have 4F² memory cells in their roadmaps.
- Related manufacturers
- Micron
- Impact score
- 85 / 100, high impact