NuAxiSemiconductor trade intelligence
Sumitomo Electric and Osaka Metropolitan fabricate GaN HEMT on 2-inch polycrystalline diamond
What happened
Sumitomo Electric and Osaka Metropolitan University fabricated a GaN HEMT on a 2-inch polycrystalline diamond substrate in a research project. The technology aims to improve power density and thermal management for future high-power RF and satellite communication devices. Neutral: This is a long-term R&D milestone with no immediate impact on component supply, pricing, or trading dynamics.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
GaN HEMTDiamond Substrate
Sumitomo Electric Industries Ltd
R&DGaNthermal-management
Source and time
Source: Semiconductor Today · 6/2/2025 · View original source
Open the NuAxi live feed →
Real-time pricing, supply signals and AI analysis for semiconductor traders