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WIN launches linearity optimized 0.12µm GaN power process
What happened
WIN Semiconductors has launched its NP12-1B, a 0.12μm gate-length depletion-mode GaN HEMT process on SiC substrates, optimized for linearity in power amplifier applications. This is a technology development announcement from a pure-play III-V foundry, not a market-moving event. Neutral: This R&D milestone does not indicate any immediate change in supply, demand, or pricing for existing GaN components.
Impact and signal
Low impactImpact score: 15/100
Affected components and suppliers
GaN HEMTGaN-on-SiC
WIN Semiconductors Corp
foundryprocess-nodeGaN
Source and time
Source: Semiconductor Today · 6/4/2025 · View original source
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