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Imec demonstrates record RF GaN-on-Si transistor performance
What happened
Imec has demonstrated a GaN-on-Si MOSHEMT achieving record efficiency and output power for E-mode devices at low voltage, alongside a record-low contact resistance of 0.024Ω·mm. The research targets integration into future mobile devices for the 6G FR3 band (7-24GHz). This is a long-term R&D milestone with no immediate impact on component supply, pricing, or procurement.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
GaN-on-Si RF Transistors
Imec
R&D6GGaN
Source and time
Source: Semiconductor Today · 6/12/2025 · View original source
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