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3D Atomic-Scale Metrology of Strain Relaxation And Roughness in GAAFETs Via Electron Ptychography (Cornell, ASM, TSMC)
What happened
Researchers from Cornell University, ASM, and TSMC published a paper on using electron ptychography for 3D atomic-scale metrology of strain and roughness in Gate-All-Around transistors. This is a fundamental R&D milestone aimed at improving process control for next-generation 3D semiconductor devices. Neutral: No immediate impact on supply, demand, or pricing; relevant only for long-term process development.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
GAAFET
TSMCASM
metrologyR&D
Source and time
Source: Semiconductor Engineering · 2/23/2026 · View original source
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