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Elucidation of scattering mechanism of 2DEG in PAMBE-grown ScAlN/GaN heterostructure
What happened
Sumitomo Electric and the University of Tokyo presented research at ICNS-15 elucidating the scattering mechanism of 2DEG in ScAlN/GaN heterostructures. This is a fundamental R&D milestone for improving the performance of next-generation high-frequency GaN HEMTs. Neutral: This is a long-term scientific discovery with no immediate impact on trading, pricing, or supply.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
GaN HEMTScAlN Barrier Layer
Sumitomo Electric Industries Ltd
R&Dmaterial-scienceGaN
Source and time
Source: Semiconductor Today · 7/17/2025 · View original source
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