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Beijing IP Court denies Innoscience’s appeal against EPC’s compensated-gate patent

What happened

The Beijing IP Court denied Innoscience's appeal, upholding the validity of EPC's Chinese patent for a compensated-gate GaN transistor fabrication method. This ruling strengthens EPC's intellectual property position in the Chinese market for GaN-on-Si power devices. Neutral: This legal affirmation does not immediately alter supply, demand, or pricing for GaN components, but may marginally benefit EPC's competitive standing long-term.

Impact and signal

Low impactImpact score: 10/100

Affected components and suppliers

GaN FETPower Management IC
Efficient Power Conversion CorpInnoscience (Suzhou) Technology Co Ltd
patentlitigationchina-court

Source and time

Source: Semiconductor Today · 8/5/2025 · View original source

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