SemiQ Launches 750 V and 1200 V Gen4 SiC MOSFETs

What happened

SemiQ Inc. has announced its fourth-generation QSiC™ silicon carbide (SiC) power devices, including 1200 V and 750 V MOSFETs and bare dies, and the devices are available immediately. Gen4 technology uses an optimized cell topology with a 36% reduction in cell pitch, along with refinements to JFET and P-well implantation, delivering a reported 23% reduction in specific on-resistance compared with previous generations. The 1200 V devices achieve a 21% reduction in drain-source on-resistance (RDS(on)) compared with Gen3, from 14 mΩ to 11 mΩ; total switching energy is reduced by more than 11%, from 1,677 µJ to 1,491 µJ, while retaining the same 5 × 5 mm die size as the previous-generation 1200 V devices. The newly introduced 750 V SiC MOSFET offers an RDS(on) of 9 mΩ and a total switching energy of 871 µJ. The Gen4 MOSFET dies undergo wafer-level gate-oxide burn-in screening at voltages exceeding 1,400 V for the 1200 V devices and 800 V for the 750 V devices, and both device types are avalanche-tested to 800 mJ. The MOSFETs are available in a four-pin TO-247-4L package and as bare dies. SemiQ plans to showcase the Gen4 portfolio at Electronica 2026, scheduled for November 10–13, at Alfatec's booth A6.620. Target applications include electric vehicle charging infrastructure, solar inverters, high-voltage DC/DC and DC/AC converters, switch-mode power supplies, uninterruptible power supplies, induction heating, welding equipment and motor drives. The source does not state the cause beyond the product announcement itself.

Impact and signal

Affected components and suppliers

Source and time

Source: Power Electronics News · 10/30/2026 · View original source