[News] China’s First 12-Inch Polycrystalline Silicon Carbide Substrate Unveiled

What happened

According to an October 26 report by Changsha Evening News, Hunan Titan Future Technology has developed China's first 12-inch polycrystalline silicon carbide (SiC) substrate. The substrate offers thermal conductivity exceeding 280 W/(m·K) and is designed for applications requiring high thermal conductivity, including AI computing chips and advanced packaging, serving as a heat-conducting base within semiconductor packaging structures to help alleviate heat buildup during high-power chip operation. The product is currently undergoing sample validation and small-batch trial production and has completed validation by leading companies. Titan Future's technology builds on research by the Powder Metallurgy Research Institute at Central South University, and the company had previously completed domestic development of 6-inch and 8-inch polycrystalline SiC substrates. On September 28, a project invested in by Titan Future Semiconductor (Jiangsu) broke ground in Jinhu Economic Development Zone, Jiangsu Province, to establish an integrated manufacturing base for high-purity, high-density SiC components and polycrystalline substrates, primarily producing high-performance SiC components and TaC-coated products for semiconductor applications; once fully operational, it is expected to have annual production capacity of 200,000 units, generate CNY 600 million in annual sales, and contribute an additional CNY 30 million in tax revenue. Titan Future also plans facilities in Changsha, Xiamen and Jinhu, with Changsha as its technology development and application incubation center and the Xiamen facility planned to have annual capacity for 500,000 composite SiC substrates.

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Source: TrendForce · 10/28/2026 · View original source