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Nanoelectromechanical Switches Target More Efficient Embedded DRAM (UC Berkeley, Samsung, Intel)
What happened
Researchers at UC Berkeley, Samsung Electronics, and Intel published a research paper titled “Nanoelectromechanically Gated Gain Cell eDRAM.” An abstract excerpt states that the memory wall and the slowdown of static random access memory (SRAM) scaling have renewed interest in gain-cell embedded dynamic random access memory (DRAM); while gain cells offer high density and energy efficiency, they suffer from limited retention. This is a research publication treated as background information; the source does not mention prices, capacity changes, or commercialization arrangements.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
gain-cell embedded DRAM (eDRAM)SRAM
researcheDRAMnanoelectromechanical switchesUC BerkeleySRAM scaling
Source and time
Source: Semiconductor Engineering · 10/18/2026 · View original source
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