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A Study of Photoresist Bake Influence on Stochastics for DUV Immersion Lithography
What happened
This study analyzes how post-apply bake (PAB) and post-exposure bake (PEB) parameters influence stochastic variations in DUV immersion lithography. It highlights the trade-off between chemical-image smoothing and image fidelity during the baking process. The research aims to optimize process conditions to improve critical dimension uniformity and reduce defects.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
PhotoresistDUV Photoresist
R&DLithographyProcessYield
Source and time
Source: SemiWiki · 9/15/2026 · View original source
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