NuAxiSemiconductor trade intelligence
Increasing 2DEG density with aluminium nitride barriers
What happened
University of Michigan researchers demonstrated a record 2DEG sheet density exceeding 1x10^14 cm^-2 in an AlN/GaN heterostructure using a 9nm AlN barrier. This is a laboratory-stage R&D achievement in material science for high-electron-mobility transistors (HEMTs). Neutral: This is a long-term technology development with no immediate impact on component supply, pricing, or trader decisions.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
GaN HEMTRF Power Transistor
rd-milestonegan-technology
Source and time
Source: Semiconductor Today · 1/26/2026 · View original source
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