NuAxiSemiconductor trade intelligence
UK Space Agency funds IceMOS to develop radiation-tolerant, high-voltage power MOSFET incorporating SiC engineered-drain substrate
What happened
The UK Space Agency awarded IceMOS Technology part of a £300,000 funding package to develop radiation-tolerant, high-voltage power MOSFETs using SiC engineered-drain substrates for space applications. This is part of the Space Technology Exploitation Programme (STEP) aimed at accelerating UK space exploration supply chains. Neutral: This is a long-term R&D project with no immediate impact on commercial semiconductor supply, pricing, or trader inventory decisions.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
Radiation-Tolerant Power MOSFET
IceMOS Technology
R&Dspacefunding
Source and time
Source: Semiconductor Today · 6/15/2023 · View original source
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