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Transphorm’s GaN first to hit short-circuit robustness milestone key for motor drives
What happened
Transphorm has demonstrated a short-circuit withstand time (SCWT) of up to 5µs for its GaN power transistors, a key milestone for motor drive applications. This is a technical R&D achievement that improves device robustness but does not indicate an immediate change in production volume or supply. Neutral: This is a long-term technology development with no direct impact on current trading dynamics for GaN components.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
GaN FETsPower Transistors
Transphorm Inc
R&Dtechnology-milestoneGaN
Source and time
Source: Semiconductor Today · 8/10/2023 · View original source
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