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EPCSpace adds rad-hard GaN devices in high-current G-Package

What happened

EPC Space has launched two new radiation-hardened GaN transistors featuring ultra-low on-resistance and high-current capability in small hermetic packages. The company claims these devices offer a lower-cost and more efficient alternative to comparable rad-hard silicon MOSFETs for high-power-density space applications. Neutral: This is a niche product launch for the aerospace/defense sector with no immediate, broad impact on commercial semiconductor supply, demand, or pricing.

Impact and signal

Low impactImpact score: 15/100

Affected components and suppliers

Radiation-Hardened GaN Transistors
EPC Space LLC
new-productaerospace-defensepower-semiconductors

Source and time

Source: Semiconductor Today · 8/29/2023 · View original source

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