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Nexperia launches discrete 1200 V devices as its first silicon carbide MOSFETs
What happened
Nexperia has launched its first silicon carbide MOSFETs, introducing two 1200V discrete devices in TO-247 packages with RDS(on) values of 40mΩ and 80mΩ. This marks the company's entry into the competitive SiC power device market, expanding its portfolio beyond traditional silicon-based discretes. Neutral: This product launch adds a new supplier to the SiC market but does not indicate an immediate shift in supply, demand, or pricing for existing components.
Impact and signal
Low impactImpact score: 22/100
Affected components and suppliers
SiC MOSFET
Nexperia
new-productsicpower-discrete
Source and time
Source: Semiconductor Today · 11/30/2023 · View original source
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