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Intel demos first 3D stacked CMOS transistors combined with backside power and direct backside contact

What happened

Intel demonstrated the first 3D stacked CMOS transistors integrated with backside power delivery and direct backside contacts at IEDM 2023. The company also showcased large-scale 3D monolithic integration of silicon and gallium nitride transistors on a 300mm wafer. This is a long-term R&D milestone with no immediate impact on component supply, pricing, or trading decisions.

Impact and signal

Low impactImpact score: 10/100

Affected components and suppliers

Logic (CMOS)GaN Transistors
rd-milestoneprocess-technology3d-integration

Source and time

Source: Semiconductor Today · 12/11/2023 · View original source

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