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Imec demos GaN-on-Si MISHEMTs with performance suiting 5G-advanced base station and mobile device applications
What happened
Imec presented AlN/GaN MISHEMTs on 200mm silicon wafers at IEDM 2023, demonstrating high output power and energy efficiency at 28GHz. The research claims performance superior to other GaN MISHEMTs, with the silicon substrate offering a potential cost advantage for future manufacturing. Neutral: This is a long-term R&D milestone with no immediate impact on component supply, pricing, or trading decisions.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
GaN-on-Si RF Power Transistors
R&D5GGaN
Source and time
Source: Semiconductor Today · 12/13/2023 · View original source
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