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CEA-Leti develops CMOS-compatible 200mm GaN-on-silicon process close to state-of-the-art GaN/SiC performance

What happened

CEA-Leti has developed a 200mm GaN-on-silicon process technology compatible with CMOS cleanrooms, aiming to match GaN/SiC performance at lower cost. This is a research milestone from a French R&D center, not a commercial production announcement. Neutral: This long-term R&D development has no immediate impact on GaN component supply, pricing, or trader decisions.

Impact and signal

Low impactImpact score: 10/100

Affected components and suppliers

GaN-on-Si Power DevicesGaN-on-SiC Power Devices
technology-milestonemanufacturing-process

Source and time

Source: Semiconductor Today · 12/15/2023 · View original source

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