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Soctera demos superior thermal performance in GaN HEMTs for next-gen telecoms and radar
What happened
Soctera demonstrated GaN HEMTs achieving a peak surface temperature rise of 59°C while dissipating 10.4W/mm, significantly outperforming typical devices which reach their thermal limit at ~5W/mm. This represents a technical R&D milestone for improving power density and reliability in next-generation telecom and radar applications. Neutral: This lab demonstration has no immediate impact on supply, demand, or pricing for commercial GaN components.
Impact and signal
Low impactImpact score: 12/100
Affected components and suppliers
GaN HEMTsMillimeter-wave Power Amplifiers
Soctera
R&Dthermal-performanceGaN
Source and time
Source: Semiconductor Today · 2/9/2024 · View original source
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