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RT NEWS: 🔥 #Samsung reportedly hits another milestone, producing a 10a DRAM working die—the first sub-10nm node. Built on 4F square and Vertical C...
What happened
Samsung Electronics has reportedly produced a working die for its 10a DRAM, marking the first sub-10nm node and utilizing 4F square and Vertical Channel Transistor technology. The company is targeting mass production for this technology in 2028. Neutral: This is a long-term R&D milestone with no immediate impact on supply, pricing, or trading decisions.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
R&Dprocess-node
Source and time
Source: TrendForce Official (Market Data) · 4/24/2026 · View original source
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