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Samsung Electronics Produces First Working Die on Sub-10nm DRAM Node
What happened
Samsung Electronics has produced a working die on its sub-10nm (10a) DRAM process, marking the first application of a 4F² cell and vertical channel transistor (VCT) structure. The company targets development completion this year, quality testing in 2025, and mass production in 2028. Neutral: This is a long-term R&D milestone with no immediate impact on DRAM supply, pricing, or trader decisions.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
DRAMDDR5
rd-milestoneprocess-node
Source and time
Source: The Elec · 4/24/2026 · View original source
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