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Resonac and Soitec to jointly develop bonded substrates for SiC power semiconductors

What happened

Resonac and Soitec have signed an agreement to jointly develop 200mm silicon carbide (SiC) bonded substrates, a key material for power semiconductor epitaxial wafers. This partnership aims to advance SiC manufacturing technology to meet growing demand from the electric vehicle and renewable energy sectors. Neutral: This is a long-term R&D initiative with no immediate impact on supply, prices, or trading dynamics for existing SiC components.

Impact and signal

Low impactImpact score: 15/100

Affected components and suppliers

SiC SubstratesSiC Epitaxial Wafers

Resonac CorpSoitec

partnershiprdsiccapacity-expansion

Source and time

Source: Semiconductor Today · 9/24/2024 · View original source

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Resonac and Soitec to jointly develop bonded substrates for SiC power semiconductors

What happened

Impact and signal

Affected components and suppliers

Source and time

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