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Reliability of the SiO2/SiC Interface in SiC Power Transistors
What happened
The article details the reliability challenges of the SiO2/SiC interface in SiC power transistors, specifically identifying carbon residues, oxygen vacancies, and interface state density ($D_{it}$) as causes for threshold voltage instability.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
SiC MOSFETsSiC Power Transistors
SiCReliabilityInterfacePhysics
Source and time
Source: Power Electronics News · 4/3/2026 · View original source
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