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DARPA awards HexaTech AlN substrate development contract
What happened
HexaTech Inc has secured a multi-year DARPA contract to develop high-quality aluminum nitride (AlN) substrates as part of the Ultra-Wide Bandgap Semiconductors program. The initiative aims to create foundational materials for future high-power, high-frequency electronics. Neutral: This is a long-term R&D effort with no immediate impact on commercial semiconductor supply, pricing, or trading dynamics.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
AlN SubstratesUltra-Wide Bandgap Semiconductors
HexaTech IncStanley Electric Co Ltd
R&Dgovernment-contractmaterials
Source and time
Source: Semiconductor Today · 10/2/2024 · View original source
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