[News] Samsung Reportedly Advances Xi’an to 236-Layer NAND; SK hynix Eyes Dalian Upgrade Amid Tight Supply

What happened

Samsung is ramping 236-layer NAND mass production at its Xi'an fab and planning a 286-layer upgrade by 2026, while SK hynix is preparing to restart equipment installation at its Dalian Phase 2 plant in H2 2026. The moves are driven by competitive pressure from Chinese rivals and the need to upgrade legacy capacity amid tightening supply. Bearish: Both expansions, particularly Samsung's significant output shift to advanced nodes, signal increased future supply of high-layer NAND, potentially easing price pressures.

Impact and signal

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Source and time

Source: TrendForce · 3/29/2026 · View original source