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All-GO-HEMT project gains €2m German funding to develop high-mobility gallium oxide
What happened
The 'All-GO-HEMT' project led by Germany's Leibniz-Institut für Kristallzüchtung has received €2 million in BMBF funding to develop high-mobility gallium oxide heterostructures for power electronics. The research aims to improve efficiency in power conversion applications, contributing to sustainable energy goals. Neutral: This is a long-term R&D project with no immediate impact on trading dynamics, supply, or pricing for commercial semiconductor components.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
Power SemiconductorsGallium Oxide (Ga2O3) Substrates
R&Dgovernment-fundingwide-bandgap
Source and time
Source: Semiconductor Today · 10/25/2024 · View original source
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