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[News] South Korea Reportedly Tackles 3D NAND Bottleneck with New Material, Achieving Up to 23× Faster Erase Speed
What happened
KAIST researchers report a lab-stage breakthrough using boron oxynitride (BON) material in NAND flash tunneling layers, achieving up to 23x faster erase speeds and improved precision in PLC environments. This addresses technical scaling challenges in 3D NAND but remains a research milestone with no immediate commercial production timeline. Neutral: No near-term supply, demand, or price impact for traders.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
3D NAND FlashPLC NAND
R&Dmaterial-science
Source and time
Source: TrendForce · 3/23/2026 · View original source
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