NuAxiSemiconductor trade intelligence
High-k Gate Oxide Improves 1,200-V Vertical GaN Performance
What happened
The article details the application of high-k gate oxide to improve the performance of 1,200-V vertical GaN (vGaN) devices, addressing thermal and resistance challenges compared to lateral GaN.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
Vertical GaNGaN-on-SiliconHEMT
vertical-ganhigh-kr-spthermal-performance
Source and time
Source: Power Electronics News · 3/23/2026 · View original source
Open the NuAxi live feed →
Real-time pricing, supply signals and AI analysis for semiconductor traders