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CGD and IFPEN demo GaN-based 800VDC inverter that outperforms SiC

What happened

Cambridge GaN Devices (CGD) and IFPEN have demonstrated an 800VDC inverter using CGD's 650V GaN ICs, claiming performance superior to SiC. This is an R&D milestone showcasing GaN's potential in high-voltage power applications. Neutral: This is a technology demonstration with no immediate impact on supply, demand, or pricing for commercial GaN or SiC components.

Impact and signal

Low impactImpact score: 15/100

Affected components and suppliers

GaN Power ICsPower Transistors

Cambridge GaN Devices Ltd

ICeGaN650V

R&Dtechnology-demoGaN

Source and time

Source: Semiconductor Today · 11/14/2024 · View original source

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CGD and IFPEN demo GaN-based 800VDC inverter that outperforms SiC

What happened

Impact and signal

Affected components and suppliers

Source and time

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