NuAxiSemiconductor trade intelligence
CGD’s Combo ICeGaN combines ICeGaN HEMT ICs and IGBTs in parallel
What happened
Cambridge GaN Devices (CGD) has detailed its Combo ICeGaN technology, which integrates GaN HEMT ICs and IGBTs in parallel modules for EV powertrain applications above 100kW. The solution is positioned as a cost-effective alternative to silicon carbide (SiC) modules in a market valued over $10 billion. Neutral: This is a product announcement with no immediate impact on supply, demand, or pricing of existing electronic components.
Impact and signal
Low impactImpact score: 20/100
Affected components and suppliers
GaN HEMTIGBTPower Modules
Cambridge GaN Devices Ltd
technology-trendproduct-launchev
Source and time
Source: Semiconductor Today · 3/10/2025 · View original source
Open the NuAxi live feed →
Real-time pricing, supply signals and AI analysis for semiconductor traders