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Transphorm demonstrating 99% efficiency power switching with 1200V GaN power transistor

What happened

Transphorm presented R&D results demonstrating 99% efficiency with a 1200V GaN power transistor at ISPSD 2022. This is a technical milestone showcasing the potential performance of next-generation high-voltage GaN devices. Neutral: This is a lab-stage R&D announcement with no immediate impact on supply, demand, or pricing for commercial components.

Impact and signal

Low impactImpact score: 10/100

Affected components and suppliers

GaN FETsPower Transistors

Transphorm Inc

R&DefficiencyGaN

Source and time

Source: Semiconductor Today · 2/25/2022 · View original source

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Transphorm demonstrating 99% efficiency power switching with 1200V GaN power transistor

What happened

Impact and signal

Affected components and suppliers

Source and time

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