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Microchip Launches Rad-Tolerant 20A GaN Converter for Space

What happened

Microchip Technology has introduced the POL-05-20S-T, a radiation-tolerant gallium nitride (GaN) point-of-load (POL) converter designed for spaceborne processing systems. The device delivers up to 20 A of continuous output current in a compact surface-mount package measuring 1.51 × 1.51 × 0.45 inches and weighing 25 g, with an input voltage range of 4.75 V to 13.2 V, an adjustable output from 0.7 V to 5 V, and an operating temperature range of −55°C to +100°C at full load. For radiation tolerance, Microchip specifies electrical parameters before and after exposure to total ionizing dose (TID) levels of up to 50 krad, and the converter is characterized for single-event effects (SEE) at linear energy transfer (LET) levels up to 43 MeV·cm²/mg. Targeting high-current, fast-transient loads such as the core voltage rails of FPGAs, microcontrollers, and ASICs, the converter is available now in production quantities.