GlobalFoundries Returns to Advanced-Node Race With 7 nm-Class FDX Fusion

What happened

GlobalFoundries is returning to the advanced-node race with a solution called FDX Fusion, based on fully-depleted silicon-on-insulator (FD-SOI) technology. As background: in 2018, GlobalFoundries announced it was stopping its 7 nm node development indefinitely, which the source attributes to increasingly expensive node design (requiring multi-billion dollar investments), growing complexity, and many players encountering yield and manufacturing difficulties; the company then continued to develop unique semiconductor solutions that did not focus on smaller transistor sizes. According to the source, FDX Fusion takes substrate isolation a step further by creating a fully insulating layer beneath the channel, enabling capabilities such as ultra-low-power in-memory computing, seamless integration of embedded non-volatile memory (like eMRAM), and highly efficient dense logic designs. GlobalFoundries claims that FDX Fusion offers 7 nm-class node characteristics in terms of size and twice the transistor density of the first-generation 22FDX node, which was designated as a 22 nm-class design. These performance figures are company claims, and the event is an announcement/plan rather than a confirmed production milestone.

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Source and time

Source: TechPowerUp · 10/12/2026 · View original source