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New approach to broadband characterisation of sub-THz ICs

What happened

Keysight Technologies, the University of Glasgow, the National Physical Laboratory (NPL), and MPI Corporation have developed a new approach to broadband characterisation of next-generation sub-terahertz (sub-THz) semiconductor devices. The four organisations demonstrated continuous on-wafer characterisation of indium phosphide high-electron-mobility transistors (InP HEMTs) from near DC to 250 GHz in a single sweep, simplifying broadband measurements for advanced semiconductor research and design. The setup combined Keysight's PNA-X Vector Network Analyzer, Single-Sweep 250 GHz Frequency Extender, and Precision Source/Measure Unit (SMU); the University of Glasgow's InP HEMT devices and on-wafer calibration standards; MPI Corporation's broadband on-wafer probing technology and calibration software; and NPL's high-frequency metrology and calibration methodologies. This enabled continuous measurement from near DC to 250 GHz with a single probe touchdown, eliminating multiple setup changes, with built-in source filtering and broadband source power calibration helping ensure signal purity at the probe-tip. This is a measurement-technology collaboration demonstration and serves as research and design background; it has no bearing on prices, capacity, or policy.

Impact and signal

Low impactImpact score: 25/100

Affected components and suppliers

sub-terahertz (sub-THz) semiconductor devicesindium phosphide high-electron-mobility transistors (InP HEMTs)
Keysight TechnologiesUniversity of GlasgowNational Physical Laboratory (NPL)MPI Corporation
sub-THzInP HEMTbroadband characterisationon-wafer measurementKeysight TechnologiesUniversity of Glasgow

Source and time

Source: Electronics Weekly · 10/11/2026 · View original source

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