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Fraunhofer IAF inaugurates new MOCVD and laboratory research buildings

What happened

Fraunhofer IAF inaugurated new MOCVD and laboratory buildings, expanding its R&D infrastructure for compound semiconductor technologies like GaN-on-SiC. This investment supports long-term research into next-generation power electronics and RF components. Neutral: This is a long-term R&D facility expansion with no immediate impact on commercial supply, pricing, or trader decisions.

Impact and signal

Low impactImpact score: 8/100

Affected components and suppliers

GaN-on-SiCGaN-on-SiDiamond Substrates
Fraunhofer IAF
R&Dcapacity-expansioncompound-semiconductors

Source and time

Source: Semiconductor Today · 7/1/2022 · View original source

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