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Comparing A7 CFET and A10 Nanosheet FETs From Parasitics to Chip Reliability (TUM, UNIMORE, Applied Materials)
What happened
Researchers from TU Munich, University of Modena and Reggio Emilia, in collaboration with Applied Materials, published a paper comparing A7 CFET and A10 Nanosheet FETs using a physics-based STCO flow to assess parasitic RCs and reliability.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
A7 CFETA10 Nanosheet FET
technologyresearchcfetnanosheet
Source and time
Source: Semiconductor Engineering · 9/25/2026 · View original source
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