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Comparing A7 CFET and A10 Nanosheet FETs From Parasitics to Chip Reliability (TUM, UNIMORE, Applied Materials)

What happened

Researchers from TU Munich, University of Modena and Reggio Emilia, in collaboration with Applied Materials, published a paper comparing A7 CFET and A10 Nanosheet FETs using a physics-based STCO flow to assess parasitic RCs and reliability.

Impact and signal

Low impactImpact score: 10/100

Affected components and suppliers

A7 CFETA10 Nanosheet FET
technologyresearchcfetnanosheet

Source and time

Source: Semiconductor Engineering · 9/25/2026 · View original source

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