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Transphorm releases simulation model of first 1200V GaN-on-sapphire device

What happened

Transphorm has released a simulation model and preliminary datasheet for its TP120H070WS, claimed to be the industry's first 1200V GaN-on-sapphire power FET. This represents a technical milestone in high-voltage GaN technology, expanding the available component options for power conversion designs. Neutral: This is a long-term R&D development with no immediate impact on trading supply, demand, or pricing for existing power semiconductor components.

Impact and signal

Low impactImpact score: 20/100

Affected components and suppliers

1200V GaN FET

Transphorm Inc

TP120H070WS

ganpower-semiconductorsimulation-model

Source and time

Source: Semiconductor Today · 5/9/2023 · View original source

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Transphorm releases simulation model of first 1200V GaN-on-sapphire device

What happened

Impact and signal

Affected components and suppliers

Source and time

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