NuAxiSemiconductor trade intelligence
J2 and HKSTP to establish first silicon carbide fab in Hong Kong
What happened
J2 Semiconductor and HKSTP have signed an MoU to establish Hong Kong's first 8-inch silicon carbide (SiC) wafer fab and a global R&D center for third-generation semiconductors. This represents a long-term strategic investment in SiC manufacturing capacity, a key material for power electronics. Neutral: This is a forward-looking R&D and capacity announcement with no immediate impact on supply, demand, or pricing for existing components.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
SiC WafersThird-Generation Semiconductors
J2 Semiconductor (Shanghai) Co Ltd
capacity-expansionrd-milestonesic
Source and time
Source: Semiconductor Today · 10/17/2023 · View original source
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